parameter symbol max. units drain-source voltage v ds 30 gate-source voltage v gs 12 continuous drain or source 25c i d 8.3 current (v gs 3 4.5v) 70c 6.6 a pulsed drain current ? i dm 66 power dissipation 25c p d 2.5 70c 1.6 schottky and body diode 25c i f (av) 3.5 a average forwardcurrent ? 70c 2.2 junction & storage temperature range t j , t stg C55 to 150 c ? co-pack n-channel hexfet power mosfet and schottky diode ? ideal for synchronous rectifiers in dc-dc converters up to 5a output ? low conduction losses ? low switching losses ? low vf schottky rectifier fetky ? mosfet / schottky diode absolute maximum ratings parameter max. units maximum junction-to-ambient ? r q ja 50 c/w thermal resistance v w description the fetky ? family of co-pack hexfet mosfets and schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. hexfet power mosfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifiers low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so- 8 package is designed for vapor phase, infrared or wave soldering techniques. top view 8 1 2 3 4 5 6 7 a/s a/s a/s g k/d k/d d k/d k/d irf7807d1 pd- 93761 www.irf.com 1 11/8/99 irf7807d1 v ds 30v r ds(on) 25m w q g 14nc q sw 5.2nc q oss 18.4nc device features (max values) so-8
irf7807d1 2 www.irf.com electrical characteristics schottky diode & body diode ratings and characteristics ? repetitive rating; pulse width limited by max. junction temperature. ? pulse width 300 s; duty cycle 2%. ? when mounted on 1 inch square copper board, t < 10 sec. ? 50% duty cycle, rectangular * devices are 100% tested to these parameters. parameter min typ max units conditions diode forward voltage v sd 0.5 v t j = 25c, i s = 1a, v gs =0v ? 0.39 t j = 125c, i s = 1a, v gs =0v ? reverse recovery time trr 51 ns t j = 25c, i s = 7.0a, v ds = 16v reverse recovery charge qrr 48 nc di/dt = 100a/s forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) parameter min typ max units conditions drain-to-source v (br)dss 30 v v gs = 0v, i d = 250a breakdown voltage* static drain-source r ds (on) 17 25 m w v gs = 4.5v, i d = 7a ? on resistance* gate threshold voltage* v gs (th) 1.0 v v ds = v gs ,i d = 250a drain-source leakage i dss 90 m av ds = 24v, v gs = 0v current* 7.2 ma v ds = 24v, v gs = 0v, t j = 125c gate-source leakage i gss +/- 100 na v gs = +/-12v current* total gate charge q gsync 10.5 14 v ds <100mv, synch fet* v gs = 5v, i d = 7a total gate charge q gcont 12 17 v ds = 16v, control fet* v gs = 5v, i d = 7a pre-vth q gs1 2.1 v ds = 16v, i d = 7a gate-source charge post-vth q gs2 0.76 nc gate-source charge gate to drain charge q gd 2.9 switch charge* q sw 3.66 5.2 (q gs2 + q gd ) output charge* q oss 15.3 18.4 v ds = 16v, v gs = 0 gate resistance r g 1.2 w
irf7807d1 www.irf.com 3 fig 3. typical reverse output characteristics fig 4. typical reverse output characteristics fig 2. typical output characteristics fig 1. typical output characteristics 0.1 1 10 v ds , drain-to-source voltage (v) 1 10 100 i d , drain-to-source current ( a ) 2.5v vgs top 4.5v 3.5v 3.0v bottom 2.5v 380s pulse width tj = 25c 0.1 1 10 v ds , drain-to-source voltage (v) 1 10 100 i d , drain-to-source current (a) 2.5v vgs top 4.5v 3.5v 3.0v bottom 2.5v 380s pulse width tj = 150c 0 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) 0 10 20 30 40 50 60 i s , source-to-drain current (a) 380s pulse width tj = 25c vgs top 4.5v 3.5v 3.0v 2.5v 2.0v bottom 0.0v 0.0v 0 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) 0 10 20 30 40 50 60 70 i s , source-to-drain current (a) 380s pulse width tj = 150c vgs top 4.5v 3.5v 3.0v 2.5v 2.0v bottom 0.0v 0.0v
irf7807d1 4 www.irf.com fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage fig 8. typical transfer characteristics 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss fig 7. normalized on-resistance vs. temperature 0 2 4 6 8 10 12 q g, total gate charge (nc) 0.0 2.0 4.0 6.0 v gs , gate-to-source voltage (v) i d = 7.0a v ds = 16v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature ( c ) 0.5 1.0 1.5 2.0 r ds(on) , drain-to-source on resistance (normalized) i d = 7.0a v gs = 4.5v 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 1 10 100 i d , drain-to-source current ( a) t j = 25c t j = 150c v ds = 10v 380s pulse width
irf7807d1 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient ( hexfet mosfet ) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 9. on-resistance vs. gate voltage 0 20 40 60 80 0.016 0.018 0.020 0.022 0.024 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v fig 10. on-resistance vs. drain current ( w ) 2.0 4.0 6.0 8.0 10.0 v gs, gate -to -source voltage (v) 0.01 0.02 0.03 0.04 0.05 r ds(on) , drain-to -source on resistance ( w ) i d = 7.0a
irf7807d1 6 www.irf.com mosfet , body diode & schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage fig. 12 - typical forward voltage drop characteristics 0 5 10 15 20 25 30 reverse voltage - v r (v) 0.0001 0.001 0.01 0.1 1 10 100 reverse current - i r ( ma ) 125c 100c tj = 150c 75c 50c 25c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 forward voltage drop - v f ( v ) 0.1 1 10 100 instantaneous forward current - i f ( a ) tj = 125c tj = 25c
irf7807d1 www.irf.com 7 so-8 part marking so-8 package details
irf7807d1 8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 11/99
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